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| (R) STW6NA80 STH6NA80FI N - CHANNEL 800V - 1.8 - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE STW 6NA80 STH6NA80FI s s s s s s s V DSS 800 V 800 V R DS(on) < 2.2 < 2.2 ID 5.4 A 3.4 A TYPICAL RDS(on) = 1.8 AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 1 TO-247 ISOWATT218 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST W6NA80 V DS V DGR V GS ID ID I DM (*) P tot V ISO Ts tg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Un it STH6NA80F I 800 800 30 V V V 3.4 2.1 22 60 0.48 4000 A A A W W /o C V o o 5.4 3.4 22 150 1.2 -65 to 150 150 C C (*) Pulse width limited by safe operating area October 1998 1/10 STW6NA80-STH6NA80FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOW AT T218 2.08 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS E AR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Repetitive Avalanche Energy (pulse width limited by Tj max, < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by T j max, < 1%) Max Valu e 5.4 150 5.8 3.4 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 800 25 50 100 T yp. Max. Unit V A A nA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (VDS = 0) V GS = 30 V Tc = 100 o C ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Test Con ditions ID = 250 A Min. 2.25 T yp. 3 1.8 T c = 100 C 5.4 o Max. 3.75 2.2 4.4 Unit V A Static Drain-source O n V GS = 10 V ID = 3 A Resistance V GS = 10 V I D = 3 A On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz ID = 3 A V GS = 0 Min. 3 T yp. 5.5 1250 140 35 1700 190 50 Max. Unit S pF pF pF 2/10 STW6NA80-STH6NA80FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Con ditions V DD = 400 V ID = 3 A VGS = 10 V R G = 4.7 (see test circuit, figure 3) V DD = 640 V ID = 6 A V GS = 10 V R G = 47 (see test circuit, figure 5) V DD = 640 V ID = 6 A V GS = 10 V Min. T yp. 40 100 180 Max. 55 135 Unit ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 55 8 24 75 nC nC nC SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions V DD = 640 V ID = 6 A R G = 47 VGS = 10 V (see test circuit, figure 5) Min. T yp. 75 25 110 Max. 100 35 150 Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A V GS = 0 800 15.2 38 I SD = 6 A di/dt = 100 A/s o T j = 150 C V DD = 100 V (see test circuit, figure 5) Test Con ditions Min. T yp. Max. 5.4 22 1.6 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/10 STW6NA80-STH6NA80FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Derating Curve for TO-247 Derating Curve for ISOWATT218 Output Characteristics Transfer Characteristics 4/10 STW6NA80-STH6NA80FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STW6NA80-STH6NA80FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STW6NA80-STH6NA80FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STW6NA80-STH6NA80FI TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 8/10 STW6NA80-STH6NA80FI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 9/10 STW6NA80-STH6NA80FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 10/10 |
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